长鑫存储的突破：首款"中国制造"DDR5内存！TechInsights科技观察

kris 2025-03-05 11:19:28 10

默认

摘要： 新年来临之际，聚焦于半导体行业的知名研究公司TechInsights 注意到了中国存储的突破——在一套DDR5 6000Mhz内存中，TechIns...

新年来临之际，聚焦于半导体行业的知名研究公司TechInsights 注意到了中国存储的突破——在一套DDR5 6000Mhz内存中，TechInsights发现了首款由中国制造的DDR5芯片！

毫无疑问，这是一个令人激动的消息。TechInsights很快以“First China-made DDR5 Memory Released from CXMT China（首款“中国制造”DDR5内存，由长鑫存储发布）”为题，发表了专题内容。

目前，这篇报道正位于TechInsights首页的醒目位置，并被彭博社等多家知名媒体引用。

以下是其原文内容，并附上我们的翻译！

Amid DDR5 is now highest volume technology, China’s leading DRAM maker, ChangXin Memory Technologies (CXMT) finally revealed 16Gb DDR5 chips to the market. Just this week, TechInsights tore down and analyzed a commercial device which revealed this finding. The Gloway 16GBx2 DDR5-6000 UDIMM (VGM5UC60C36AG-DVDYBN) consists of sixteen16Gb DDR5 devices manufactured from CXMT.

当DDR5成为当下主流技术之际，中国领先的DRAM制造商——长鑫存储技术有限公司，终于向市场展示了16Gbit DDR5芯片。就在本周，TechInsights拆解并分析了一款能够证实这一结论的商用产品：光威16GBx2 DDR5-6000Mhz台式机UDIMM内存(VGM5UC60C36AG-DVDYBN)，由16颗长鑫存储制造的16Gbit DDR5芯片组成。

译者注：根据TechInsights所提及的标号，我们基本能够确定其为图中的“龙武·弈”内存。

The 16Gb DDR5 chip size measures 66.99 mm2 (length 8.19 mm, width 8.18 mm, die sealed) which results in 0.239 Gb/mm2 bit density. The die has CXMT’s new and advanced G4 DRAM generation with 0.0020 µm2 cell size and 16.0 nm feature size (F). CXMT reduced DRAM cell size by 20% from the previous G3 (F=18.0nm) DRAM node .

这颗16Gbit DDR5芯片的尺寸为66.99mm^2（长8.19mm，宽8.18mm，芯片密封），位密度达到了0.234Gbit/mm^2。这颗芯片采用了长鑫存储新一代先进的G4 DRAM工艺，存储单元面积为0.0020 µm^2，特征尺寸16.0nm。相较于上一代G3 DRAM工艺节点（特征尺寸18nm），长鑫存储将DRAM单元面积减少了20%。

在光威DDR5-6000内存中发现的长鑫存储16Gb DDR5芯片

Cell pitches measure 29.8 nm, 41.7 nm, and 47.9 nm for active, wordline, and bitline for each, which is corresponding to D1z (F: 15.8 ~ 16.2 nm) generations from Samsung, SK hynix, and Micron. CXMT provides DDR3L (2Gb/4Gb), DDR4 (4Gb/8Gb), LPDDR4X (6Gb/8Gb), and LPDDR5 (12Gb), and has now added DDR5 DRAM devices. The memory maker initially produced G1 DRAM generation with 23.8 nm (D2y) and then G2 with 18.0 nm (D1x).

存储单元的间距分别为源极29.8nm、字线41.7nm、位线47.9nm，这与三星、海力士和美光的D1z工艺节点（特征尺寸15.8~16.2nm）水平相当。长鑫存储此前已量产DDR3L（2Gbit/4Gbit），DDR4(4Gbit/8Gbit)，LPDDR4X(6Gbit/8Gbit)和LPDDR5（12Gbit）产品，如今新增了DDR5 DRAM芯片。这家存储厂商最初使用23.8nm（D2y工艺节点）制造G1 代DRAM，随后升级至18.0nm（D1x工艺节点）制造G2代产品。

长鑫存储DRAM工艺之间的比较，从G1至G4

Regarding the DRAM market, DDR5 shipment already crossed over DDR4 in Q2 2024. In 2024, DDR5 shipments reached 87 exabits (vs. DDR4 62 exabits), and expect to be 150 exabits (57%) in 2025 – according to TechInsights’DRAM Market Report from 4Q2024.

将目光投向DRAM市场，DDR5的出货量已在2024年第二季度超越了DDR4。根据TechInsights的2024年第四季度DRAM市场报告，在2024年，DDR5出货量达到了87Ebit（DDR4为62Ebit），并且有望在2025年突破150Ebit（增长57%）。

（译者注：1Eb=1024Pb= 2^60 bit）

长鑫存储、三星、SK海力士、美光的16Gbit DDR5产品对比

The top three DRAM players (Samsung, SK hynix, and Micron) produce DDR5 devices with more advanced technology nodes such as D1a/D1α and D1b/D1β, having 12 to 14nm feature sizes. Currently, 16Gb chips are the highest volume part. The top three DRAM makers started 16Gb DDR5 mass-production in 2021, which means there is now a three-year technology gap between CXMT and these vendors.

三大顶尖DRAM厂商（三星，SK海力士和美光）使用更先进的工艺节点制造DDR5芯片——如D1a/D1α和D1b/D1β——特征尺寸为12至14nm。如今，16Gbit芯片是出货规模最大的部件。这三大DRAM制造商从2021年起开始大规模量产16Gbit DDR5，意味着长鑫存储仍与这些厂商有着三年的技术差距。

译者注：我们所拍摄的、显微镜下的长鑫DDR5与三星DDR5芯片

However, CXMT skipped 17nm (D1y) DRAM node and jumped directly into 16nm (D1z) node. The Chinese chip maker has been aggressively developing the next generation (sub-15 nm without EUV lithography), and HBM technology as well. Our technical analysis teams will continue digging into the materials, process integration, and chip design and publishing our findings on the TechInsights Platform as they come available. Please stay tuned.

然而，长鑫存储跳过了17nm（D1y）DRAM节点，直奔16nm（D1z）节点而来。这家中国芯片厂商正在激进地推进下一代产品（无需EUV光刻的sub-15nm工艺）及HBM技术的研发。我们的技术分析团队将继续深入挖掘其材料、工艺集成与芯片设计细节，并第一时间在TechInsights平台发布研究成果，敬请关注！